Vapor Deposition Systems
Process Management Software (option)
YES vapor deposition systems provide total environmental control over the deposition process and accommodate a variety of functionally diverse silanes, for a variety of processes, on a variety of surfaces.
YES works collaboratively with Brigham Young University, Department of Chemistry and Biochemistry to develop and prove processes using the YES-1224P. Read more about the collaboration here.
YES-1224P gives process engineers control over:
- Amount of liquid
- Speed of liquid injection
- Vaporization chamber temperature
- Vapor line temperature
- Process vacuum chamber temperature
- Process starting pressure
- Exposure time
- Surface preparation
- Surface modification to prevent or promote adhesion
- Photoresist adhesion for semiconductor wafers
- Silane/substrate adhesion for microarrays (DNA, gene, protein, antibody, tissue)
- MEMS coating to reduce stiction
- BioMEMS and biosensor coating to reduce "drift" in device performance
- Promote biocompatibility between natural and synthetic materials
- Anti-corrosive coating
- Wafer Dehydration
- The moisture on the surface of wafers will cause unintended reactions with various deposition steps. These reactions result in unstable surface which degrade over time. Vacuum dehydration provides a clean stable starting surface resulting in superior films.
- Surface Tension Modification
- As devices are made smaller and smaller, static friction (stiction) becomes more and more significant. By modifying the surface tension with a class of fluorinated silanes, the operating life of moving parts in MEMS devices can be significantly lengthened. Conversely, if surfaces need to be bonded together, other silanes can be coated which enhance bonding strengths between unlike materials.
The YES-1224P can also be used as a silylation oven. This process enables the use of short wavelength radiationwith its attendant shallow depth of fieldto define high-resolution photoresist topographies.
The process requires exposure of the photoresist layer using a standard process with a reverse mask of the circuit. The wavelength is used to irradiate the top level of exposed photoresist.
Now, the substrate is moved to the silylation oven to be exposed to HMDS vapor. Indene-carboxylic acid generated where the photoresist was exposed then combines with HMDS vapor, impregnating the shallow surface layer with pure silicon.
In the subsequent oxygen plasma process, this silicon layer forms an effective mask and is converted to silicon dioxide. The plasma removed only the unexposed photoresist, leaving a high resolution profile of the defined circuit.